Alignment marks for multi-exposure lithography

ABSTRACT

A plurality of reticles for printing structures in the same lithography level includes an alignment structure pattern within a same relative location in each reticle. Each set of process segmentations in a grating has a reticle segmentation pitch, which is common across all gratings in the plurality of reticles. Within each pair of alignment structure patterns that occupy the same relative location in any two of the plurality of reticles, the process segmentations in one reticle are shifted relative to the process segmentations in the other reticle by a fraction of a reticle segmentation pitch. After printing all patterns in the plurality of reticles, a composite printed process segmentation structure on the substrate includes printed segmentation structures that are spaced by 1/n times the printed segmentation pitch. The pattern for the next level can be aligned to the composite printed process segmentation structure in a single alignment operation.

BACKGROUND

The present disclosure relates to lithographic methods, and particularlyto a method of aligning a lithographic mask to a substrate including apatterned underlying level structure printed with a plurality oflithographic masks and reticles employed for the method.

A reticle, or a lithographic mask, comprises a transparent reticlesubstrate and a patterned optically opaque coating thereupon;alternatively, a photomask may comprise a transparent reticle substratewith a partially transmissive layer, or with features etched out of thesubstrate to achieve optical phase shifting by changing the optical pathlength. The reticle is mounted into an exposure tool, which may beintegrated into a tool called a stepper, so that radiation from a sourceof the exposure tool passes through the reticle and impinges on aphotoresist applied to a top surface of a semiconductor substrate. Thepattern of the reticle is thus transferred into the photoresist duringthe exposure so that the photoresist may have the same pattern as thepattern of the reticle after development. The reticle may be repeatedlyemployed to replicate the pattern in the reticle in the photoresistmaterial on multiple semiconductor substrates. The coating on thereticle is optically opaque at the wavelength of the radiation source.Typical wavelengths of radiation that are employed for photolithographyinclude 365 nm, 248 nm, 193 nm, 157 nm, etc. Such deep ultraviolet (DUV)wavelengths may be employed to pattern features having dimensions of 50nm or greater in the photoresist.

A pattern in a single level can be formed by multiple lithographicmasks. The need to employ multiple lithographic masks to print a patternin a single level arises because of the limitations on lithographiccapabilities. For example, patterns in proximity to each other cannot beprinted with fidelity due to optical interferences during exposure.Thus, a single lithographic pattern including minimum size features canbe divided into two complementary patterns or a set of more than twopatterns the sum of which constitutes a complete pattern. Such divisionof a complete pattern for a single level into multiple sub-patterns canbe performed, for example, at gate level, at contact level, at vialevels, and/or at metal line levels.

When multiple exposures are employed to pattern a structure at a singlelevel, alignment of the next level structure to the previous levelbecomes challenging. The throughput of an exposure tool decreasesbecause the reticle for the new level needs to be aligned to each set ofalignment marks associated with a previous level lithographic mask andphysically printed on a substrate including a photoresist. The alignmenttool then optimizes overlay errors so that the alignment of the imagefor the current level to each previous level pattern does not exceed apreset limit, or is otherwise optimized to enhance overall alignmentbetween the current level and the previous level. Thus, the total timethat the exposure tool spends for alignment increases with the totalnumber of reticles employed to print the previous level, therebyadversely affecting the throughput of the exposure tool.

In addition, an alignment structure pattern is present in a reticle foreach printed alignment structure that is lithographically formed on asubstrate. Thus, each alignment structure pattern takes up space in areticle, and reduces area available for printing device structureswithin a die area.

BRIEF SUMMARY

A plurality of reticles for printing structures in the same lithographylevel includes an alignment structure pattern within a same relativelocation in each reticle. Each alignment structure pattern includes aset of gratings, and each grating includes an array of processsegmentations. Each set of process segmentations in a grating has areticle segmentation pitch, which is common across all gratings in theplurality of reticles. Within each pair of alignment structure patternsthat occupy the same relative location in any two of the plurality ofreticles, the process segmentations in one reticle are shifted relativeto the process segmentations in the other reticle by j/n times thereticle segmentation pitch, in which n is an integer that is equal tothe total number of reticles within the plurality of reticles, and j isa positive integer less than n. Printing a pattern on a physicalstructure on a substrate employing each of the plurality of reticlesgenerates one set of printed segmentation structures having a printedsegmentation pitch determined by the reticle segmentation pitch and ascaling factor determined by the optics of an exposure tool. Eachreticle generates a set of printed segmentation structures that isoffset from another set by k/n times the printed segmentation pitch, inwhich k is a positive integer less than n. After printing all patternsin the plurality of reticles, a composite printed process segmentationstructure on the substrate includes printed segmentation structures thatare spaced by 1/n times the printed segmentation pitch. The pattern forthe next level can be aligned to the composite printed processsegmentation structure in a single alignment operation.

According to an aspect of the present disclosure, a method of forming apatterned structure is provided. The method includes: patterning amaterial layer on a substrate by sequentially forming multiple printedlithographic patterns therein, wherein each of the multiple printedlithographic patterns includes a set of printed process segmentationstructures having a printed segmentation pitch, and the sets of printedprocess segmentation structures collectively form composite printedprocess segmentation structures having a composite printed segmentationpitch that is 1/n times the printed segmentation pitch, wherein n is atotal number of the multiple printed lithographic patterns; and aligninga reticle to the substrate employing the composite printed processsegmentation structures as a reference structure for alignment.

According to another aspect of the present disclosure, a set of reticlesis provided. Each reticle in the set of reticles includes an alignmentstructure pattern at a same relative location. Each alignment structurepattern includes a set of gratings including process segmentations. Theprocess segmentations have a reticle segmentation pitch p within each ofthe set of gratings. A relative position of the alignment structurepattern in an (i+1)-th reticle is laterally offset by a distance of 1/ntimes the reticle segmentation pitch p in a direction of the reticlesegmentation pitch p relative to a corresponding alignment structurepattern in an i-th reticle for each i between and including 1 and (n−1),wherein n is a total number of reticles in the set of reticles.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

FIG. 1A is a top-down view of a first reticle among a first exemplaryplurality of reticles according to a first embodiment of the presentdisclosure.

FIG. 1B is a top-down view of a second reticle among the first exemplaryplurality of reticles according to the first embodiment of the presentdisclosure.

FIG. 1C is a magnified view of a first alignment structure patternwithin the first reticle according to the first embodiment of thepresent disclosure.

FIG. 1D is a magnified view of a second alignment structure patternwithin the second reticle according to the first embodiment of thepresent disclosure.

FIG. 2A is a top-down view of an exemplary lithographic structure afterapplication of a first photoresist-including layer according to thefirst embodiment of the present disclosure.

FIG. 2B is a vertical cross-sectional view of the exemplary lithographicstructure of FIG. 2A along the vertical plane of B-B′ according to thefirst embodiment of the present disclosure.

FIG. 3A is a top-down view of the exemplary lithographic structure afterlithographic patterning of the first photoresist-including layeremploying the first reticle according to the first embodiment of thepresent disclosure.

FIG. 3B is a vertical cross-sectional view of the exemplary lithographicstructure of FIG. 3A along the vertical plane of B-B′ according to thefirst embodiment of the present disclosure.

FIG. 4A is a top-down view of the exemplary lithographic structure aftertransfer of a first pattern into a material layer according to the firstembodiment of the present disclosure.

FIG. 4B is a vertical cross-sectional view of the exemplary lithographicstructure of FIG. 4A along the vertical plane of B-B′ according to thefirst embodiment of the present disclosure.

FIG. 5A is a top-down view of the exemplary lithographic structure afterapplication and lithographic patterning of a secondphotoresist-including layer employing the second reticle according tothe first embodiment of the present disclosure.

FIG. 5B is a vertical cross-sectional view of the exemplary lithographicstructure of FIG. 5A along the vertical plane of B-B′ according to thefirst embodiment of the present disclosure.

FIG. 6A is a top-down view of the exemplary lithographic structure aftertransfer of a second pattern into the material layer according to thefirst embodiment of the present disclosure.

FIG. 6B is a vertical cross-sectional view of the exemplary lithographicstructure of FIG. 6A along the vertical plane of B-B′ according to thefirst embodiment of the present disclosure.

FIG. 7A is a top-down view of the exemplary lithographic structure afterdeposition of a second material layer and application and lithographicpatterning of a third photoresist-including layer according to the firstembodiment of the present disclosure.

FIG. 7B is a vertical cross-sectional view of the exemplary lithographicstructure of FIG. 7A along the vertical plane of B-B′ according to thefirst embodiment of the present disclosure.

FIG. 8A is a top-down view of a first alignment structure pattern withina first reticle in a second exemplary plurality of reticles according toa second embodiment of the present disclosure.

FIG. 8B is a top-down view of a second alignment structure patternwithin a second reticle in the second exemplary plurality of reticlesaccording to the second embodiment of the present disclosure.

FIG. 8C is a top-down view of a third alignment structure pattern withina third reticle in the third exemplary plurality of reticles accordingto the second embodiment of the present disclosure.

DETAILED DESCRIPTION

As stated above, the present disclosure relates to a method of aligninga lithographic mask to a substrate including a patterned underlyinglevel structure printed with a plurality of lithographic masks andreticles employed for the method, which is now described in detail withaccompanying figures. Throughout the drawings, the same referencenumerals or letters are used to designate like or equivalent elements.The drawings are not necessarily drawn to scale.

Referring to FIGS. 1A-1D, a first exemplary plurality of reticlesaccording to a first embodiment of the present disclosure includes afirst reticle 100 and a second reticle 200. The first reticle 100 andthe second reticle 200 include different components of a lithographicpattern for a same lithographic level. For example, the lithographiclevel can be a recessed oxide (RX) level employed to define shallowtrench isolation regions on a semiconductor substrate, a gate conductor(GC) level employed to define gate conductors on the semiconductorsubstrate, a local interconnect (LI) level employed to define localinterconnects and/or contact vias formed on the surface of thesemiconductor substrate, a via (VX) level employed to define metal viasin a metal interconnect structure, or a line (MX) level employed todefine metal lines in the metal interconnect structure.

The lithographic pattern for a given level can be decomposed into two ormore component lithographic patterns. When the two or more componentlithographic patterns are added together, the sum of the two or morecomponent lithographic patterns corresponds to the lithographic patternfor the level. The advantage of breaking up a lithographic pattern for alevel into multiple component lithographic patterns is the ability toprint sublithographic features that would not be printable through asingle lithographic exposure and development.

In the scheme illustrated in FIGS. 1A-1D, a lithographic pattern isdivided into a first component pattern and a second component pattern.The first component pattern is defined in the first reticle 100, forexample, within a first device pattern area 125 present in the firstreticle 100. The second component pattern is defined in the secondreticle 200, for example, within a second device pattern area 225present in the second reticle 200. The first device pattern area 125 andthe device pattern area 225 can have the same shape for the peripheryand the same area if the first reticle 100 and the second reticle 200are designed to employ the same type of lithographic tool, i.e., thesame wavelength for the light source and the same numerical aperture.

Each reticle (100, 200) includes a transparent substrate and a patternedopaque layer. The patterned opaque layer includes the pattern for thefirst or second component pattern. Each reticle (100, 200) can have apositive polarity or a negative polarity. A positive reticle has atransparent background area in which the patterned opaque layer isabsent, and includes opaque areas defined by the presence of thepatterned opaque layer. A negative reticle has an opaque background inwhich the patterned opaque layer is present, and includes transparentareas defined by the absence of the patterned opaque layer. While thepresent disclosure is described employing positive reticles, acorresponding counterpart employing negative reticles instead ofpositive reticles can readily be practiced by those skilled in the art.Further, the combination of a transparent substrate and a patternedopaque layer may be replaced by a substrate having a pattern ofreflective portions and absorptive portions as in the case of extremeultraviolet (EUV) lithography masks.

For example, the first reticle 100 includes a first transparent area 121and the first device pattern area 125. First opaque regions 122 presentwithin the first device pattern area 125 define the first componentpattern against the background of the first transparent area 121 withinthe first device pattern area 125 as illustrated by an inset in FIG. 1A.Likewise, the second reticle 200 includes a second transparent area 221and the second device pattern area 225. Second opaque regions 222present within the second device pattern area 225 define the secondcomponent pattern against the background of the second transparent area221 within the second device pattern area 125 as illustrated by an insetin FIG. 1B.

Each reticle (100, 200) also includes structures for enabling alignmentof the reticle relative to a substrate on which the pattern in thereticle is to be transferred by exposure and development. A structure ona reticle (100, 200) configured for use in a lithography tool foralignment purposes is referred to as an “alignment structure pattern.”The lithography tool may be use a diffraction-based alignment scheme oran image-based alignment scheme in order to align a lithographic mask toa substrate. The first reticle 100 includes first alignment structurepatterns 130. The second reticle 200 includes second alignment structurepatterns 230. The set of areas for the first alignment structurepatterns 130 in the first reticle 100 and the set of areas for thesecond alignment structure patterns 230 in the second reticle arecongruent, i.e., overlap each other if the first reticle 100 and thesecond reticle 200 are stacked on each other.

Further, a pair of corresponding alignment structure patterns across thefirst reticle 100 and the second reticle 200 is located in the samerelative location with respect to the first device pattern area 125 orwith respect to the second device pattern area 225. For example, thefirst device pattern area 125 and the second device pattern area 125 canbe congruent, and the relative location of the first alignment structurepattern 130 in the lower left corner of the first reticle 100 withrespect to the first device pattern area 125 can be identical to thelocation of the second alignment structure pattern 230 in the lower leftcorner of the second reticle 200 with respect to the second devicepattern area 225. Likewise, the relative location of the first alignmentstructure pattern 130 in the upper right corner of the first reticle 100with respect to the first device pattern area 125 can be identical tothe location of the second alignment structure pattern 230 in the upperright corner of the second reticle 200 with respect to the second devicepattern area 225.

The area of each alignment structure pattern can be defined by thepresence or absence of an opening in the optically opaque layer on thereticle. For example, each area of the first alignment structurepatterns 130 on the first reticle 100 can be defined by a first opaqueperiphery region 124, which includes an opaque periphery, i.e., anopaque frame 124. While the present disclosure is described employingalignment structure patterns having an opaque periphery, embodiments inwhich the polarity of the pattern is reversed, i.e., having transparentperiphery regions, can also be employed.

Each alignment structure pattern (130, 230) includes a set of gratings.For example, each of the first alignment structure patterns 130 caninclude a set of first gratings 133, and each of the second alignmentstructure patterns 230 can include a set of second gratings 233. Eachset of first gratings 133 on the first reticle 100 can be defined by aset of transparent areas placed within the first opaque periphery region124. Likewise, each set of first gratings 233 on the second reticle 200can be defined by a set of transparent areas placed within the secondopaque periphery region 224. Each grating within a set of gratings (133,233) is laterally spaced from another grating by an opaque portion ofthe first opaque periphery region 124 or the second opaque peripheryregion 224. While the present disclosure is described employing sets ofgratings defined by transparent areas, embodiments in which the polarityof the pattern is reversed, i.e., having opaque gratings, can also beemployed.

Each grating includes an array of process segmentations. For example,each first grating 133 includes an array of first process segmentations134, and each second grating 233 includes an array of second processsegmentations 234. Each first process segmentation 134 can be defined byan opaque area placed within a first grating 133, and each secondprocess segmentation 234 can be defined by an opaque area placed withina second grating 233. Each first process segmentation 134 can belaterally spaced from another first process segmentation 134 in ahorizontal direction perpendicular to the horizontal direction alongwhich first gratings 133 are spaced within a first alignment structurepattern 130. Likewise, each second process segmentation 234 can belaterally spaced from another second process segmentation 234 in ahorizontal direction perpendicular to the horizontal direction alongwhich second gratings 233 are spaced within a second alignment structurepattern 230. While the present disclosure is described employing processsegmentations defined by opaque areas, embodiments in which the polarityof the pattern is reversed, i.e., having transparent processsegmentations, can also be employed.

In one embodiment, each first process segmentation 134 can be defined byan opaque area placed within a first grating 133, and each secondprocess segmentation 234 can be defined by an opaque area placed withina second grating 233. Each first process segmentation 134 can belaterally spaced from another first process segmentation 134 in ahorizontal direction perpendicular to the horizontal direction alongwhich first gratings 133 are spaced within a first alignment structurepattern 130. Likewise, each second process segmentation 234 can belaterally spaced from another second process segmentation 234 in ahorizontal direction perpendicular to the horizontal direction alongwhich second gratings 233 are spaced within a second alignment structurepattern 230. While the present disclosure is described employing processsegmentations defined by opaque areas, embodiments in which the polarityof the pattern is reversed, i.e., having transparent processsegmentations, can also be employed.

Each set of process segmentations (134 or 234) in a grating (133 or 233)has a reticle segmentation pitch p, which is common across all gratings(133, 233) in the plurality of reticles employed to form a compositelithographic pattern for a level, i.e., the first reticle 100 and thesecond reticle 200 if the composite pattern is divided into twocomponent patterns. Each process segmentation (134, 234) can have thesame width, which is herein referred to as a reticle segmentation widthw.

Across the first reticle 100 and the second reticle 200, within eachpair of alignment structure patterns (130, 230) that occupy the samerelative location, the process segmentations (130, 230) in one reticleare shifted relative to the process segmentations (230, 130) in theother reticle by ½ times the reticle segmentation pitch p. This shift isillustrated in FIGS. 1C and 1D, in which lengthwise edges (shown ashorizontal edges in FIGS. 1C and 1D) of the first alignment structurepattern 130 in the lower left corner of the first reticle 100 are placedat the same vertical position as the lengthwise edges of the secondalignment structure pattern 230 in the lower left corner of the secondreticle 100. The offset in the relative positions of the processsegmentations (230, 130) across the first and second reticles (100, 200)enables cumulative printing of structures representing the processsegmentations (230, 130) within the same area of a substrate duringmultiple lithographic exposures and developments employing multiplereticles, e.g., the first reticle 100 and the second reticle 200.

While the drawings illustrate an embodiment in which the lengthwisedirection of the first process segmentations 134 and the second processsegmentations 234 is parallel, or perpendicular, to edges of the firstopaque periphery region 124 and the second opaque periphery region 224(horizontal or vertical directions in FIGS. 1C and 1D), embodiments inwhich the lengthwise direction(s) of the first process segmentations 134and/or the second process segmentations 234 is/are at an angle between 0degree and 90 degrees with respect to the edges of the first opaqueperiphery region 124 and/or the second opaque periphery region 224 canalso be implemented.

Referring to FIGS. 2A and 2B, an exemplary lithographic structureincludes a substrate 10, a first material layer 60 deposited on the topsurface of the substrate 10, and a first photoresist-including layer 29Ldeposited on the first material layer 60. The substrate 10 can be asemiconductor substrate including a semiconductor material such assilicon, germanium, a silicon-germanium alloy, or any compoundsemiconductor material known in the art. The first material layer 60 canbe a dielectric material layer, a semiconductor material layer, aconductive material layer, or a composite stack including a combinationthereof. The first photoresist-including layer 29L can include anoptional organic planarizing material layer, a photoresist layer, and anantirefelective coating (ARC) layer as known in the art.

Referring to FIGS. 3A and 3B, the first photoresist-including layer 29Lis lithographically patterned employing the first reticle 100 as anexposure mask. An exposed lithographic pattern, i.e., a lithographicpattern defined by the exposure of the photoresist material therein, isformed in the first photoresist-including layer 29L. The exposedlithographic pattern replicates the first component pattern in the firstreticle 100.

The first photoresist-including layer 29L is divided into two types ofareas depending on lithographic exposure, i.e., lithographically exposedphotoresist regions and lithographically unexposed photoresist portions.The portion of the first photoresist-including layer 29L correspondingto the first device pattern area 125 of the first reticle 100 becomes afirst patterned photoresist region 25 including first lithographicallyexposed pattern area photoresist portions 21 and first lithographicallyunexposed pattern area photoresist portions 22. Additionallithographically unexposed photoresist portions 27 (and/or additionallithographically exposed photoresist portions) can also be formed inareas reserved for printed alignment structures (not shown) previouslyformed or to be subsequently formed for other levels.

The exposed lithographic pattern replicates all features of the firstalignment structure patterns 130, the first opaque periphery region 124,the first gratings 133, and the first process segmentations 134.Specifically, each first opaque periphery region 124 is replicated as afirst photoresist periphery portion 24 that includes an unexposedportion of the first photoresist-including layer 29L, each first grating133 is replicated in the exposed lithographic pattern as a firstphotoresist grating pattern portion 33 that includes an exposed portionof the first photoresist-including layer 29L, and each first processsegmentation 134 is replicated as a first photoresist processsegmentation portion 34 that includes an unexposed portion of the firstphotoresist-including layer 29L. Thus, each first alignment structurepattern 130 is replicated in the exposed lithographic pattern as a firstphotoresist alignment pattern portion 30. While the present disclosureis described employing first opaque periphery regions 124 and firstprocess segmentations 134 defined by opaque areas in the first reticle100 and first photoresist periphery portions 24 and first photoresistprocess segmentation portions 34 defined by unexposed portions of thefirst photoresist-including layer 29L, embodiments in which the polarityof the pattern is reversed can also be employed.

The exposed lithographic pattern is subsequently developed. Depending onwhether the first photoresist-including layer 29L includes a positiveresist or a negative resist, lithographically exposed portions orlithographically unexposed portions of the first photoresist-includinglayer 29L may be removed. A positive resist is a type of photoresist inwhich lithographically exposed portions of the photoresist becomessoluble to a photoresist developer solution, while unexposed portions ofthe photoresist remains insoluble to the photoresist developer solution.A negative resist is a type of photoresist in which lithographicallyexposed portions of the photoresist becomes insoluble to a photoresistdeveloper solution, while unexposed portions of the photoresist remainssoluble to the photoresist developer solution.

In the embodiment illustrated herein, the first photoresist-includinglayer 29L includes a negative photoresist. Thus, the lithographicallyunexposed photoresist portions are removed during development, forexample, by being dissolved in a photoresist developer solution. Asdiscussed above, the lithographically unexposed portions of the firstphotoresist-including layer 29L can include first photoresist peripheryportions 24 and first photoresist process segmentation portions 34 aswell as first lithographically unexposed pattern area photoresistportions 22. The lithographically exposed photoresist portions remainafter development defines a first pattern, which includes a lithographicpattern that replicates the first component pattern in the first reticle100 by defining openings in the first photoresist-including layer 29L.Portions of the top surface of the first material layer 60 arephysically exposed below the openings.

Referring to FIGS. 4A and 4B, the first pattern in the firstphotoresist-including layer 29L is transferred into the first materiallayer 60, for example, by an anisotropic etch. The anisotropic etch canbe a reactive ion etch that employs etchants such as hydrofluorocarbongases as known in the art. The first pattern in the firstphotoresist-including layer 29L is transferred into a physical structurebelow the first photoresist-including layer 29L, i.e., the firstmaterial layer 60. The remaining portions of the firstphotoresist-including layer 29L, including any organic planarizingmaterial layer, if present, is removed after the anisotropic etch, forexample, by ashing.

The first pattern is printed in the first material layer 60 by ananisotropic etch that employs the remaining portion of the firstphotoresist-including layer 29L as an etch mask. The first pattern asprinted in the first material layer 60 includes a first printed deviceregion 63, which is a replica of a pattern in the first device patternarea 125 within the first reticle 100. The first printed device region63 includes the first material layer 60 having first openings 62therein. The openings 62 define the pattern in the first printed deviceregion 63. The ratio of the size of the first printed lithographicpattern 63 on the substrate 10 to the size of the first device patternarea 125 on the first reticle 100 is determined by the numericalaperture of lithographic tool employed to lithographically expose thefirst photoresist-including layer 29L.

In addition, the first pattern as printed in the first material layer 60includes features replicating additional patterns in the first reticle100, which include the first alignment structure patterns 130.Specifically, each first opaque periphery region 124 is replicated as aprinted periphery portion 64 in the form of a contiguous opening in thefirst material layer 60, each first grating 133 is replicated as aprinted grating 73 in the form of an unetched remaining portion of thefirst material layer 60, and each first process segmentation 134 isreplicated as a first printed process segmentation structures 74 in theform of a discrete opening in a printed grating 73 in the first materiallayer 60. The collection of a printed periphery portion 64, printedgratings 73, and first printed process segmentation structures 74corresponding to a first alignment structure pattern 130 constitute afirst printed alignment structure 31. Thus, each first alignmentstructure pattern 130 is replicated in the patterned first materiallayer 60 as a first printed alignment structure 31.

Each set of first printed process segmentation structures 74 within aprinted grating has a pitch, which is determined by the numericalaperture of a lithography tool and the reticle segmentation pitch p. Thepitch of the second photoresist process segmentation portion 54 isherein referred to as a printed segmentation pitch.

Referring to FIGS. 5A and 5B, a second photoresist-including layer 49Lis deposited on the first material layer 60. The secondphotoresist-including layer 49L can include an optional organicplanarizing material layer 49P, a photoresist layer, and anantireflective coating (ARC) layer as known in the art. Typically, theorganic planarizing material layer 49P within the secondphotoresist-including layer 49L fills the openings within the firstmaterial layer 60 so that the photoresist layer within the secondphotoresist-including layer 49L can have a constant thickness throughoutthe entire area over the substrate 10.

The second reticle 200 is aligned to the pattern in the first materiallayer 60 for exposure of the second photoresist-including layer 49.Specifically, the first printed alignment structures 31 present in thefirst material layer 60 are employed so that the position of a patternreplicating the second alignment structure patterns 230 coincide withthe position of the first printed alignment structures 31 uponalignment. Specifically, the image of a set of second gratings 233 in asecond alignment structure pattern 230 is congruent with thecorresponding shape of the printed gratings 73 derived from the firstgrating 133 in the first reticle 100 located in the same relativelocation as the set of second gratings 233. Thus, by laterally movingthe substrate 10, the substrate 10 can be positioned so that theposition of the image of the set of second gratings 233 coincides withthe corresponding printed gratings 73.

The second photoresist-including layer 49L is lithographically patternedemploying the second reticle 200 as an exposure mask. An exposedlithographic pattern is formed in the second photoresist-including layer49L. The exposed lithographic pattern replicates the second componentpattern in the second reticle 200.

The second photoresist-including layer 49L is divided into two types ofareas depending on lithographic exposure, i.e., lithographically exposedphotoresist regions and lithographically unexposed photoresist portions.The portion of the second photoresist-including layer 49L correspondingto the second device pattern area 225 of the second reticle 200 becomesa second patterned photoresist region 45 including secondlithographically exposed pattern area photoresist portions 41 and firstlithographically unexposed pattern area photoresist portions 42.Additional lithographically unexposed photoresist portions 47 (and/oradditional lithographically exposed photoresist portions) can also beformed in areas reserved for printed alignment structures (not shown)previously formed or to be subsequently formed for other levels.

The exposed lithographic pattern replicates all features of the secondalignment structure patterns 230, the second opaque periphery region224, the second gratings 233, and the second process segmentations 234.Specifically, each second opaque periphery region 224 is replicated as asecond photoresist periphery portion 44 that includes an unexposedportion of the second photoresist-including layer 49L, each secondgrating 233 is replicated in the exposed lithographic pattern as asecond photoresist grating pattern portion 53 that includes an exposedportion of the second photoresist-including layer 49L, and each secondprocess segmentation 234 is replicated as a second photoresist processsegmentation portion 54 that includes an unexposed portion of the secondphotoresist-including layer 49L. Thus, each second alignment structurepattern 230 is replicated in the exposed lithographic pattern as asecond photoresist alignment pattern portion 50. While the presentdisclosure is described employing second opaque periphery regions 224and second process segmentations 234 defined by opaque areas in thesecond reticle 200 and second photoresist periphery portions 44 andsecond photoresist process segmentation portions 54 defined by unexposedportions of the second photoresist-including layer 49L, embodiments inwhich the polarity of the pattern is reversed can also be employed.

As discussed above, the second process segmentations 234 are laterallyoffset relative to the corresponding first process segmentations 134 byone half of the reticle segmentation pitch p in the direction of thereticle segmentation pitch p, which is the horizontal directionperpendicular to the periodicity of the first gratings 133 or theperiodicity of the second gratings 233. Thus, while the location of eachsecond photoresist grating pattern portion 53 coincide with the locationof a printed gratings 73 as manifested in the first material layer 60,the location of each set of second photoresist process segmentationportions 54 within a second photoresist grating pattern portion 53 islaterally offset from the corresponding set of first printed processsegmentation structures 74 manifested within the first material layer asopenings (and filled by unexposed portions of the secondphotoresist-including layer 49L) by one half of the pitch of the secondphotoresist process segmentation portion 54, i.e., by ½ times theprinted segmentation pitch.

The exposed lithographic pattern is subsequently developed. Depending onwhether the second photoresist-including layer 49L includes a positiveresist or a negative resist, lithographically exposed portions orlithographically unexposed portions of the second photoresist-includinglayer 49L may be removed.

In the embodiment illustrated herein, the second photoresist-includinglayer 49L includes a negative photoresist. Thus, the lithographicallyunexposed photoresist portions are removed during development, forexample, by being dissolved in a photoresist developer solution. Asdiscussed above, the lithographically unexposed portions of the secondphotoresist-including layer 49L can include second photoresist peripheryportions 44 and second photoresist process segmentation portions 54 aswell as second lithographically unexposed pattern area photoresistportions 42. The lithographically exposed photoresist portions remainafter development defines a second pattern, which includes alithographic pattern that replicates the second component pattern in thesecond reticle 100 by defining openings in the secondphotoresist-including layer 49L. Portions of the top surface of thesecond material layer 60 are physically exposed below the openings. Theimages of the second opaque periphery regions 224 can coincide with thearea of the printed periphery portions 64.

Referring to FIGS. 6A and 6B, the second pattern in the secondphotoresist-including layer 49L is transferred into the first materiallayer 60, for example, by an anisotropic etch. The anisotropic etch canbe a reactive ion etch that employs etchants such as hydrofluorocarbongases as known in the art. The second pattern in the secondphotoresist-including layer 49L is transferred into the physicalstructure below the second photoresist-including layer 49L, i.e., thefirst material layer 60. The organic planarizing material layer 49P(within the second photoresist-including layer 49L) filling the openingswithin the first material layer 60 protects the underlying substrate 10during the anisotropic etch. The remaining portions of the secondphotoresist-including layer 49L, including the organic planarizingmaterial layer 49P filling the preexisting openings in the firstmaterial layer 60 according to the first pattern, is removed after theanisotropic etch, for example, by ashing.

The anisotropic etch employs the remaining portion of the secondphotoresist-including layer 49L as an etch mask. The second pattern isadditionally printed in the first material layer 60, i.e., in additionto the previously printed first pattern that is now present within thefirst material layer 60 and defined by the first openings 72 andfeatures in the first printed alignment structures 31 (See FIGS. 4A and4B). Second openings 72 are formed in the first material layer 60 bythis anisotropic etch. The second openings 72 define the second patternthat is added to the first pattern. The second pattern as additionallyprinted in the first material layer 60 forms a composite printedlithographic pattern. The composite printed lithographic patternincludes a composite printed device region 65, which includes thepattern in the first device pattern area 125 within the first reticle100 and the pattern in the second device pattern area 225 within thesecond reticle 200. The composite printed device region 65 is theportion of the first material layer 60 having the first openings 62 andthe second openings 72 therein. The ratio of the size of the compositeprinted lithographic device pattern 65 on the substrate 10 to the sizeof the second device pattern area 225 on the second reticle 200 isdetermined by the numerical aperture of lithographic tool employed tolithographically expose the second photoresist-including layer 49L.

In addition, the composite printed lithographic pattern, as printed bythe two anisotropic etches into the first material layer 60, includesfeatures replicating additional patterns in the first reticle 100 andthe second reticle 200. Particularly, the composite printed lithographicpattern include structures derived from the first alignment structurepatterns 130 and the second alignment structure patterns 230, which areprinted alignment structures 70.

Within each printed alignment structure 70, the images of the firstopaque periphery region 124 and the images of the second opaqueperiphery region 224 coincide, and collectively form the printedperiphery portions 64. Each printed periphery portion 64 is in the formof a contiguous opening in the second material layer 60. Further, theimages of the first gratings 133 and the images of the second gratings233 coincide within each printed alignment structure 70, andcollectively form the printed gratings 73. The printed gratings 73 areunetched remaining portions of the first material layer 60. Printedgratings 73 within a printed alignment structure 70 can be laterallyspaced in a one-dimensional periodic structure with a periodicity in onedirection, e.g., in a horizontal direction perpendicular to the B-B′plane in FIG. 6A.

Each first process segmentation 134 is replicated as first printedprocess segmentation structures 74 in the form of a discrete opening ina printed grating 73 in the first material layer 60. The first processsegmentations 134 have the printed segmentation pitch in one direction.Each second process segmentation 234 is replicated as a second printedprocess segmentation structure 74 in the form of a discrete opening in aprinted grating 73 in the first material layer 60. The second processsegmentations 234 have the printed segmentation pitch in the samedirection as the pitch of the first printed process segmentationstructures 84, which is the printed process segmentation pitch.

The collection of the first printed process segmentation structures 74and the second printed process segmentation structures 84 constitutecomposite printed process segmentation structures. Due to the design ofthe first and second reticles (100, 200) and the alignment methodsdescribed above the first printed process segmentation structures 74 andthe second printed process segmentation structures 84 are laterallyoffset in the direction of the pitch of the first printed processsegmentation structures 74, which is the same as the direction of thepitch of the second printed process segmentation structures 84. Thus,the composite printed process segmentation structures (74, 84) has apitch that is ½ of the pitch of the first printed process segmentationstructures 74.

While the present disclosure is described above for an embodiment inwhich each of the multiple printed lithographic patterns is formed by aseparate lithographic processing sequence including application of aphotoresist-including layer, lithographic exposure of thephotoresist-including layer, and transfer of a lithographic pattern inthe photoresist-including layer into the material layer by an etch,alternative lithographic pattern transfer methods can also be employedin some other embodiments. For example, litho-freeze-litho-etch (LFLE)process or dual exposure track only pitch split (DETOPS) process asknown in the art can be employed. The LFLE process is described, forexample, in U.S. Patent Application Publication No. 2011/0081618 to Wanget al., and the DETOPS process is described, for example, in U.S. PatentApplication Publication No. 2011/0049680 to Burns et al., which areincorporated herein by reference.

Referring to FIGS. 7A and 7B, the openings in the first material layer60 can be filled by a complementary material having a different propertythan the material of the first material layer 60. For example, thecomplementary material can be a conductive material such as metal or adoped semiconductor material if the material of the first material layer60 is a dielectric material. Alternately, the complementary material canbe an insulator material such as silicon oxide, silicon dioxide,organosilicate glass, or any other dielectric material known in the art,if the material of the first material layer 60 is a conductive materialor a doped semiconductor material.

Thus, a complimentarily filled device region 85 including dielectricmaterials and conductive materials are formed by filling the openings(62, 72) in the composite printed device region 65. Further, alignmentfill structures 89 are formed within the each printed alignmentstructure 70 by filling openings of the printed alignment structure 70within the first material layer 60 with the complimentary material.

In one embodiment, the excess complementary material can be removed fromabove the first material layer 60, for example, by chemical mechanicalplanarization (CMP) or a recess etch. A second material layer 90 can beseparately deposited over the first material layer 60 filled with thecomplementary material and subsequently planarized. The second materiallayer 90 can include a conductive material, a dielectric material, or asemiconductor material as known in the art.

In another embodiment, the planarization process may be omitted, and theexcess complimentary material can remain over the first material layer65 to form a second material layer 90. The second material layer 90 caninclude a conductive material, a dielectric material, or a semiconductormaterial as known in the art.

A third photoresist-including layer 99L is subsequently applied on thesecond material layer 90. The substrate 10 is loaded into a lithographytool. An upper level reticle (not shown) is also loaded into thelithography tool, and is aligned to the substrate 10 employing thecomposite printed process segmentation structures (74, 84) as referencestructures for alignment. While the first material layer 60 includes acomposite pattern derived from multiple reticles, i.e., the firstreticle 100 and the second reticle, each of the composite printedprocess segmentation structures (74, 84) are located in a singlealignment structure. Thus, the total number of alignment structures thatthe lithography tool needs to locate is the same as if a single reticlewas used to form the composite pattern. Thus, the time required foraligning the upper level reticle to the existing composite printedprocess segmentation structures (74, 84) can be the same as the timerequired for alignment of a substrate including a pattern derived from asingle mask.

The same processing scheme can be employed for the upper level reticle.In other words, the upper level reticle employed herein may be a firstreticle among a set of two upper level reticles. The lithographicexposure of the third photoresist-including layer 99L can form a thirdpatterned photoresist region 95 including third lithographically exposedpattern area photoresist portions 27 and first lithographicallyunexposed pattern area photoresist portions (not shown). In addition,third photoresist alignment pattern portion 91 can be formed. Each thirdphotoresist alignment pattern portion 91 can include a third photoresistperiphery portions 94, third photoresist grating pattern portions 98,and third photoresist process segmentation portions 94.

While the present disclosure is described by a combination of positivereticles and negative photoresists, embodiments in which differentcombinations of reticle types and photoresist types are employed canalso be practiced. Alternative combinations include a combination ofpositive reticles and positive photoresists, negative reticles andpositive photoresists, or negative reticles and negative photoresists.

While the embodiments illustrated above employs two reticles and twoseparate photolithography processes, the alignment scheme illustratedabove can be extended to employ more than two reticles. Referring toFIGS. 8A-8C, alignment structure patterns for a set of n reticles isillustrated for an embodiment that employs n reticles and n separatephotolithography processes sequentially performed to replicate thepattern within each of the n reticles in the same material layer.

The set of n reticles includes a first reticle, a second reticle, andadditional reticles up to the n-th reticle 0. The number n can be anypositive integer greater than 1. Each reticle in the set of n reticlesincludes an alignment structure pattern at a same relative location. Afirst alignment structure pattern 330 that can be employed for the firstreticle is illustrated in FIG. 8A, a second alignment structure pattern430 that can be employed for the second reticle is illustrated in FIG.8B, and the n-th alignment structure pattern 530 that can be employedfor the n-th reticle is illustrated in FIG. 8C.

Each alignment structure pattern (330, 430, 530) includes a set ofgratings (333, 433, or 533). Each set of gratings (333, 433, or 533)includes process segmentations (334, 434, or 534). The processsegmentations (334, 434, 534) have a reticle segmentation pitch p withineach of the gratings (333, 433, or 533). For each i between andincluding 1 and (n−1), the relative position of the alignment structurepattern in an (i+1)-th reticle is laterally offset by a distance of 1/ntimes the reticle segmentation pitch p in the direction of the reticlesegmentation pitch p relative to the corresponding alignment structurepattern in an i-th reticle.

Each reticle among the set of reticles includes an optically transparentsubstrate including a patterned optically opaque layer. In oneembodiment, the area of a set of gratings (333,433, 533) can be definedby presence of openings in a patterned optically opaque layer, and theprocess segmentations (334, 434, 534) can be defined by absence ofopenings in the patterned optically opaque layer in corresponding areas.In another embodiment, the area of the set of gratings (333, 433, 533)can be defined by absence of openings in a patterned optically opaquelayer in corresponding areas, and the process segmentations (334, 434,534) can be defined by presence of openings in the patterned opticallyopaque layer. Each reticle among the set of reticle includes a devicepattern area in which a component of a semiconductor device or aninterconnect element is defined by transparency or opacity of acorresponding area therein.

The set of reticles are sequentially employed to transfer a componentpattern from each reticle into the same material layer over nrepetitions of lithographic processing sequences. Each of the multipleprinted lithographic patterns is formed by a separate lithographicprocessing sequence, i.e., a total of n lithographic processingsequences. Each of the separate lithographic processing sequencesincludes application of a photoresist-including layer, lithographicexposure of the photoresist-including layer, and transfer of alithographic pattern in the photoresist-including layer into thematerial layer by an etch. Each photoresist-including layer can includean organic planarizing layer, a photoresist, and an antireflectivecoating (ARC) layer. Each lithographic exposure of thephotoresist-including layer employs one of the n reticles. Each of thereticles is aligned for lithographic exposure such that the images ofthe gratings (333, 433, 533) are formed in the same location at eachlithographic exposure.

Because of the lateral offset among the various process segmentations(334, 434, 534) across the various reticles in the set of n reticles,each set of printed process segmentation structures is laterally offsetfrom another set of printed process segmentation structures by 1/n timesthe printed segmentation pitch. Each subsequently formed set among thesets of printed process segmentation structures is laterally offset by adistance of j/n times the printed segmentation pitch in a direction ofthe printed segmentation pitch relative to a previously formed set amongthe sets of printed process segmentation structures. The number n is thetotal number of multiple printed lithographic patterns, which is thesame as the total number of reticles. The number j is a positive integerless than n.

Thus, a material layer on a substrate can be patterned by sequentiallyforming n printed lithographic patterns therein. Each of the multipleprinted lithographic patterns includes a set of printed processsegmentation structures having a printed segmentation pitch. The printedsegmentation pitch determined by the reticle segmentation pitch p and ascaling factor determined by the optics of the exposure tool employedfor the n reticles. Each reticle generates a set of printed segmentationstructures that is offset from another set by k/n times the printedsegmentation pitch, in which k is a positive integer less than n.

After printing all patterns in the plurality of reticles, a compositeprinted process segmentation structure on the substrate includes printedsegmentation structures that are spaced by 1/n times the printedsegmentation pitch. The n sets of printed process segmentationstructures collectively form composite printed process segmentationstructures having a composite printed segmentation pitch that is 1/ntimes the printed segmentation pitch. The pattern for the next level canbe aligned to the composite printed process segmentation structure in asingle alignment operation.

While the disclosure has been described in terms of specificembodiments, it is evident in view of the foregoing description thatnumerous alternatives, modifications and variations will be apparent tothose skilled in the art. Accordingly, the disclosure is intended toencompass all such alternatives, modifications and variations which fallwithin the scope and spirit of the disclosure and the following claims.

1. A method of forming a patterned structure comprising: patterning amaterial layer on a substrate by sequentially forming multiple printedlithographic patterns therein, wherein each of said multiple printedlithographic patterns includes a set of printed process segmentationstructures having a printed segmentation pitch, and said sets of printedprocess segmentation structures collectively form composite printedprocess segmentation structures having a composite printed segmentationpitch that is 1/n times said printed segmentation pitch, wherein n is atotal number of said multiple printed lithographic patterns; andaligning a reticle to said substrate employing said composite printedprocess segmentation structures as a reference structure for alignment.2. The method of claim 1, wherein each of said multiple printedlithographic patterns is formed by a separate lithographic processingsequence, each of said separate lithographic processing sequencesincluding application of a photoresist-including layer, lithographicexposure of said photoresist-including layer, and transfer of alithographic pattern in said photoresist-including layer into saidmaterial layer by an etch.
 3. The method of claim 1, wherein each set ofprinted process segmentation structures is formed by etchingcorresponding portions of said material layer.
 4. The method of claim 1,further comprising: forming another material layer over said patternedmaterial layer; and applying a photoresist-including layer on saidanother material layer prior to said aligning of said reticle, whereinsaid reticles is aligned to said substrate while saidphotoresist-including layer is present on said substrate.
 5. The methodof claim 4, further comprising: lithographically exposing saidphotoresist-including layer employing said reticle as an exposure mask;and transferring a pattern in said lithographically exposedphotoresist-including layer into said other material layer by an etch.6. The method of claim 4, further comprising forming additional printedprocess segmentation structures in said another material layer employingsaid reticle, wherein an area of said additional printed processsegmentation structure does not overlie an area of said compositeprinted process segmentation structures.
 7. The method of claim 1,wherein each set of printed process segmentation structures is laterallyoffset from another set of printed process segmentation structures by1/n times said printed segmentation pitch.
 8. The method of claim 1,wherein each subsequently formed set among said sets of printed processsegmentation structures is laterally offset by a distance of j/n timessaid printed segmentation pitch in a direction of said printedsegmentation pitch relative to a previously formed set among said setsof printed process segmentation structures, wherein n is a total numberof multiple printed lithographic patterns, and j is a positive integerless than n.
 9. The method of claim 1, wherein said multiple printedlithographic patterns are sequentially formed by a set of lithographicprocess sequences employing a set of reticles, wherein each reticleincludes a reticle pattern corresponding to one multiple printedlithographic patterns.
 10. The method of claim 9, wherein each reticlein said set of reticles includes an alignment structure pattern at asame relative location, each alignment structure pattern comprising aset of gratings including process segmentations, wherein said processsegmentations have a reticle segmentation pitch p within each of saidgratings.
 11. The method of claim 10, wherein a relative position ofsaid alignment structure pattern in an (i+1)-st reticle is laterallyoffset by a distance of 1/n times said reticle segmentation pitch p in adirection of said reticle segmentation pitch p relative to acorresponding alignment structure pattern in an i-th reticle for each ibetween and including 1 and (n−1), wherein n is a total number ofreticles in said set of reticles.
 12. The method of claim 10, wherein atotal number of reticles in said set of reticles equals a total numberof printed lithographic patterns in said multiple printed lithographicpatterns.
 13. The method of claim 10, wherein each reticle among saidset of reticles includes an optically transparent substrate and apatterned optically opaque layer thereupon.
 14. The method of claim 13,wherein an area of said set of gratings is defined by presence ofopenings in said patterned optically opaque layer, and said processsegmentations are defined by absence of openings in said patternedoptically opaque layer in corresponding areas.
 15. The method of claim13, wherein an area of said set of gratings is defined by absence ofopenings in said patterned optically opaque layer in correspondingareas, and said process segmentations are defined by presence ofopenings in said patterned optically opaque layer.
 16. A set ofreticles, wherein each reticle in said set of reticles comprises analignment structure pattern at a same relative location, each alignmentstructure pattern comprising a set of gratings including processsegmentations, said process segmentations having a reticle segmentationpitch p within each grating of said set of gratings, wherein a relativeposition of said alignment structure pattern in an (i+1)-st reticle islaterally offset by a distance of 1/n times said reticle segmentationpitch p in a direction of said reticle segmentation pitch p relative toa corresponding alignment structure pattern in an i-th reticle for eachi between and including 1 and (n−1), wherein n is a total number ofreticles in said set of reticles.
 17. The set of reticles of claim 16,wherein each reticle among said set of reticles includes an opticallytransparent substrate and a patterned optically opaque layer thereupon.18. The set of reticles of claim 17, wherein an area of said set ofgratings is defined by presence of openings in said patterned opticallyopaque layer, and said process segmentations are defined by absence ofopenings in said patterned optically opaque layer in correspondingareas.
 19. The set of reticles of claim 17, wherein an area of said setof gratings is defined by absence of openings in said patternedoptically opaque layer in corresponding areas, and said processsegmentations are defined by presence of openings in said patternedoptically opaque layer.
 20. The set of reticles of claim 16, whereineach reticle among said set of reticle comprises a device pattern areain which a component of a semiconductor device or an interconnectelement is defined by transparency or opacity of a corresponding areatherein.